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Volumn 12, Issue 1, 1996, Pages 90-93

Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004003311 PISSN: 02670836 EISSN: None Source Type: Journal
DOI: 10.1179/mst.1996.12.1.90 Document Type: Article

Times cited : (4)

References (21)

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