Carrier density dependence of the ambipolar diffusion coefficient in GaAs n-i-p structures

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1501-1503

  Streb, D ^a   Klem, G ^a   Fix, W ^a   Kiesel, P ^a   Dohler G H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003975255     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119948     Document Type: Article

References (8)

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7. G. Klem, D. Streb, P. Kiesel, and G. H. Döhler (unpublished).
8. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 87.