Preparation and properties of two types of submicron high-Tc Josephson junctions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2697, Issue , 1996, Pages 479-486

  Seidel, Paul ^a   Schmidl, Frank ^a   Machalett, Frank ^a   Schneidewind, Henrik ^a   Pfuch, Andreas ^a   Hübner, Uwe ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

High Tc superconducting films; Ion beams; Josephson devices; SQUIDs; Submicron technology; Weak links

Indexed keywords

BEAM PLASMA INTERACTIONS; COPPER; COPPER OXIDES; ELECTRIC CONDUCTIVITY; ION BEAMS; ION BOMBARDMENT; IONS; JOSEPHSON JUNCTION DEVICES; OXIDE FILMS; OXIDE SUPERCONDUCTORS; PHYSICAL PROPERTIES; QUANTUM OPTICS; SQUIDS; SUPERCONDUCTING DEVICES; SUPERCONDUCTING FILMS; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY; TECHNOLOGY;

ATOMIC SCALES; GRADIOMETERS; HIGH ANISOTROPIES; HIGH-TC SUPERCONDUCTING FILMS; INTERFACE PROBLEMS; JOSEPHSON DEVICES; JOSEPHSON JUNCTIONS; JUNCTION ARRAYS; MESA STRUCTURES; NANO BRIDGES; NANOMETER REGIONS; PREPARATION PARAMETERS; PREPARATION PROCESSES; RADIATION SOURCES; SERIES CONNECTIONS; SHORT COHERENCE LENGTHS; SINGLE JUNCTIONS; STACK HEIGHTS; STACKED JUNCTIONS; SUB MICRONS; SUBMICRON TECHNOLOGY; SUPERCONDUCTING PROPERTIES; TWO TYPES; VOLTAGE STANDARDS; WEAK LINKS;

FILM PREPARATION;

EID: 0003914657     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.250256     Document Type: Conference Paper

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