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Volumn 482-485, Issue PART 2, 2001, Pages 817-822

Growth of Yb suicide on Si(100): Structure and electronic properties as a function of annealing temperature

(4) Pasquali, L a D'Addato, S a Turdi, D b Nannarone, S a

a UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

Author keywords

Angle resolved photoemission; Low energy electron diffraction (LEED); Metal semiconductor interfaces; Metastable induced electron spectroscopy (MIES); Silicon; Ytterbium

Indexed keywords

EID: 0003824960 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)00851-2 Document Type: Article

Times cited : (3)

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