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Physical Review B

Volumn 49, Issue 20, 1994, Pages 14766-14769

Structure, energetics, and dissociation of Si-H bonds at dangling bonds in silicon

(2) Van De Walle, Chris G a Street, R A a

a PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003697064 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.49.14766 Document Type: Article

Times cited : (89)

References (14)

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- Spin polarization has been taken into account in the calculations for neutral dangling bonds (which contain an unpaired electron); see also, Ref. 9

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