Analysis of process modifications for efficient diamond chemical vapor deposition

Diamond and Related Materials

Volumn 5, Issue 9, 1996, Pages 895-906

  Kassmann, Dean E ^a   Badgwell, Thomas A ^a  

^a Rice University   (United States)

Author keywords

Chemical vapor deposition; Chlorine activated chemical vapor deposition; Diamond; Modeling; Substrate injection

Indexed keywords

EID: 0003569189     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00441-6     Document Type: Article

References (12)

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10. NIST Chemical Kinetics Database Version 6.0, US Department of Commerce, 1993.
11. M.E. Coltrin, R.J. Kee, G.H. Evans, E. Meeks, F.M. Rupley and J.F. Grcar, SPIN (version 3.83): a Fortran program for modeling one-dimensional rotating-disk/stagnation-flow chemical vapor deposition reactors, Rep. SAND 91-8003, Sandia National Laboratories, 1993.
12. C. Pan, C.J. Chu, J.L. Margrave and R.H. Hauge, Chlorine-activated diamond chemical vapor deposition, J. Electrochem. Soc., 141 (11) (1994) 3246.