Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ-modulation-doped heterostructure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2293-2296

  Young, A P ^a   Wieder, H H ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003547186     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588923     Document Type: Article

References (20)

1. For recent reviews, see P. M. Mooney, Commun. Condens. Mater. Phys. 16, 167 (1992), and P. M. Mooney, J. Appl. Phys. 67, R1 (1990).
2. For recent reviews, see P. M. Mooney, Commun. Condens. Mater. Phys. 16, 167 (1992), and P. M. Mooney, J. Appl. Phys. 67, R1 (1990).
3. T. Baba, T. Mizutani, and M. Ogawa, J. Appl. Phys. 59, 526 (1986).
4. B. Etienne and V. Thierry-Mieg, Appl. Phys. Lett. 52, 1237 (1988).
5. E. Munoz, E. Calleja, I. Izpura, F. Garcia, A. L. Romero, J. L. Sanchez-Rojas, A. L. Powell, and J. Castagne, J. Appl. Phys. 73, 4988 (1993).
6. K. Ploog, M. Hauser, and A. Fischer, Appl. Phys. A 45, 233 (1988).
7. J. M. Fernandez, M. E. Lazzouni, L. J. Sham, and H. H. Wieder, J. Appl. Phys. 74, 1161 (1993).
8. A. P. Young, J. M. Fernandez, J. Chen, and H. H. Wieder, J. Vac. Sci. Technol. B 12, 1309 (1994).
9. W.-N. Jiang, N. X. Nguyen, R. D. Underwood, U. K. Mishra, and R. G. Wilson, Appl. Phys. Lett. 66, 845 (1995).
10. See, for example, A. Chandra, P. A. Garbinski, N. J. Shah, J. M. Kuo, R. F. Koft, and P. R. Smith, IEEE Electron. Device Lett. 11, 306 (1990).
11. M. E. Lazzouni and L. J. Sham, Phys. Rev. B 48, 8948 (1993).
12. Software courtesy of G. Snider, A+EP Dept., 212 Clark Hall, Cornell University, Ithaca, NY 14853.
13. E. Weber, Semiconductors and Semimetals (Academic, San Diego, CA, 1993), Vol. 38, pp. 366-369.
14. B. Jogai, Appl. Phys. Lett. 66, 436 (1995).
15. H. Tian, K. W. Kim, and M. A. Littlejohn, J. Appl. Phys. 69, 4123 (1991).
16. P. M. Mooney, N. S. Caswell, and S. L. Wright, J. Appl. Phys. 62, 4786 (1987).
17. E. Litwin-Staszewska, T. Suski, C. Skierbiszewski, F. Kobbi, J. L. Robert, and V. Mosser, J. Appl. Phys. 77, 405 (1995).
18. E. Buks, M. Heiblum, Y. Levinson, and H. Shtrikman, Semicond. Sci. Technol. 9, 2031 (1994).
19. C. Ghezzi and A. Parsini, Semicond. Sci. Technol. 8, 472 (1993).
20. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Halsted, New York, 1988).