Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter

Journal of Nuclear Science and Technology

Volumn 34, Issue 10, 1997, Pages 992-995

  Chang Liao, Kuei Shu ^a   Wu, Tai Liang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Commercial device; Dosimetric parameters; Drain current; Field effect transistors; Metal oxide semiconductor; PMOS transistors; Radiation doses; Radiation dosimeters; Sensitivity; Threshold voltage

Indexed keywords

EID: 0003368842     PISSN: 00223131     EISSN: None     Source Type: Journal    
DOI: 10.1080/18811248.1997.9733775     Document Type: Article

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