In-situ poling of lithium niobate films on silicon wafer by applying a low electric field during pulsed laser deposition

Materials Science and Engineering B

Volumn 53, Issue 3, 1998, Pages 278-283

  Guo, X L ^a,b   Hu, W S ^a   Liu, Z G ^a   Zhu, S N ^a   Yu, T ^a   Xiong, S B ^a   Lin, C Y ^a  

^a NANJING UNIVERSITY   (China)

^b Seoul National University   (South Korea)

Author keywords

In situ poling; Lithium niobate film; Pulsed laser deposition; Silicon wafer

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; ELECTRIC FIELD EFFECTS; LITHIUM COMPOUNDS; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; STOICHIOMETRY; SURFACE PROPERTIES; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

IN SITU POLING; LITHIUM NIOBATE; PULSED LASER DEPOSITION; X RAY ENERGY DISPERSIVE SPECTROMETERS (XREDS);

OPTICAL FILMS;

EID: 0003348365     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00152-4     Document Type: Article

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