Band-structure effects on Landau-level mixing in resonant magnetotunneling

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 8, 1998, Pages 4599-4603

  Lin, D ^a   Chen, C ^a   Wu, G ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

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Indexed keywords

EID: 0003182092     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.4599     Document Type: Article

References (19)

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19. The Luttinger parameters we take are off by within 20% from that obtained by a linear interpolation between those of Si and Ge, and so are the deformation-potential parameters. For the strained (Formula presented) system, a straight linear interpolation of the parameters does not work well. See Ref. 6 and also J.-P. Cheng, V. P. Kesan, D. A. Grutzmacher, and T. O. Sedgwick, Appl. Phys. Lett. 62, 1522 (1993). Another reason for our adjustment of parameters is that we have neglected spacer layers and Coulomb interaction between the carriers.