Leem investigation of refractory metals grown on insulating substrates: Nb (110) on sapphire (112̄0)

Surface Review and Letters

Volumn 5, Issue 6, 1998, Pages 1221-1231

  Swiech W ^a   Appleton, R S ^a   Wiemeyer, B D ^a   Flynn, C P ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003170728     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x98001559     Document Type: Article

References (26)

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4. Ti, for example, may be grown on six different planes by these methods; see J. C. A. Huang, R.-R Du and C. P. Flynn, Phys. Rev. Lett. 66, 341 (1991).
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