Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1918-1920

  Broekaert, T P E ^a   Randall, J N ^a   Beam III, E A ^a   Jovanovic, D ^a   Seabaugh, A C ^a   Smith, B D ^a,b  

^a TEXAS INSTRUMENTS   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003155250     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117621     Document Type: Article

References (16)

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10. See, e.g., E. R. Brown, Hot Carriers in Semiconductors Nanostructures: Physics and Applications, edited by Jagdeep Shah (Academic, Boston, 1992).
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14. T. P. E. Broekaert, J. N. Randall, E. A. Beam III, D. Jovanovic, and B. D Smith, 53rd Device Research Conference Digest, Abstract IIIA-7 (IEEE, New York, 1995), p. 56.
15. E. A. Beam III, T. S. Henderson, A. C. Seabaugh, and J. Y. Jang, J. Cryst. Growth 116, 436 (1992).
16. The data for Fig. 4 was obtained using a numerical two-dimensional Recursive Green's function simulation that takes into account injection from all subbands. The charge and potential were calculated self-consistently within the Thomas-Fermi model. D. Jovanovic (unpublished).