Comparison of Semiconductor Transport Models Using a Monte Carlo Consistency Test

IEEE Transactions on Electron Devices

Volumn 41, Issue 1, 1994, Pages 76-83

  Ramaswamy, Sridhar ^a   Tang, Ting wei ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003079830     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.259623     Document Type: Article

References (7)

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3. R. Stratton, “Diffusion of hot and cold electrons in semiconductor barriers,” Phys. Rev. B, vol. 126, no. 6, pp. 2002-2014, 1962.
4. G. Baccarani and M. Wordeman, “An investigation of steady-state velocity overshoots in silicon,” Solid State Electron., vol. 28, no. 4, pp. 407-416, 1985.
5. T. Bordelon, X. Wang, C. Mazier, and A. Tasch, “Accounting for bandstructure effects in the hydrodynamic model: A first-order approach for silicon device simulation,” Solid State Electron., vol. 35, no. 2, pp. 131-139, 1992.
6. S.-C. Lee and T.-w. Tang, “Hydrodynamic modeling of silicon BJT with Monte Carlo calibrated transport coefficients,” IEICE Trans. Electron., vol. E75-C, no. 2, pp. 189-193, 1992.
7. W. Hansch and M. Miura-Mattausch, “The hot-electron problem in small semiconductor devices,” J. Appl. Phys., vol. 60, no. 2, pp. 650-656, 1986.