High frequency dielectric properties of thin-film pzt capacitors

Integrated Ferroelectrics

Volumn 10, Issue 1-4, 1995, Pages 335-342

  Williamson, W ^a   Gilbert, B K ^a   Chen, H D ^b   Udayakumar, K R ^b   Cross, L E ^b   Bozler, C M ^c  

^a MAYO CLINIC   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003035916     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584589508012291     Document Type: Article

References (9)

1. B. Randall et al., Proc. of 1993 Intl. Elec. Packaging Conf. 1. d. 615–627. (1993)
2. B.K. Gilbert and W.L. Walters. Intl. J. Microcircuits and Elec. Packaging. 15, 171, (1992).
3. D. Dimos, S.J. Lockwood. R.W. Schwartz, and M.S. Rodgers. IEEE Transactions on Components. Packaging, and Manuf. Tech. 18 (1), (1995)
4. T. Garino, D. Dimos, and S. Lockwood, Proc. of 1994 Intl. Symp. on Microelectronics, p. 179–184. (1994)
5. K.R. Udayakumar, J. Chen, S.B. Krupanidhi, and L.E. Cross, Proc. Intl. Symp. on Applications of Ferroelectrics, p. 741–43. (1990)
6. Y. Shimizu, K.R. Udavakumar, and L.E. Cross, J. Amer. Cer. Soc., 74 (12). p. 3023–27 (1991)
7. K.R. Udayakumar, P.J. Schuele, J. Chen, S.B. Krupanidhi, and L.E. Cross, J. Appl. Phys., 77 (8). 15 April 1995
8. S. Mancha. Ferroelectrics. 1992. Vol. 135. pp. 131–137
9. D.M. Pozar, Microwave Engineering, p. 231–235. Addison Weslev. (1990)