EPR and ENDOR investigations of B acceptors in 3C-, 4H- And 6H-silicon carbide

Semiconductor Science and Technology

Volumn 13, Issue 1, 1998, Pages 59-70

  Greulich Weber, S ^a   Feege, F ^a   Kalabukhova, K N ^b   Lukin, S N ^b   Spaeth, J M ^a   Adrian, F J ^c  

^a UNIVERSITY OF PADERBORN   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003010076     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/1/009     Document Type: Article

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