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Volumn 13, Issue 2, 1998, Pages 207-213

Photomodulated reflectance of tensilely strained InGaAs/InGaAsP quantum well structures

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[No Author keywords available]

Indexed keywords


EID: 0003008883     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/2/009     Document Type: Article
Times cited : (4)

References (22)
  • 20
    • 0004108176 scopus 로고
    • EMIS Data Review Series no 6, INSPEC (London: Institute of Electrical Engineers)
    • 1991 Properties of Indium Phosphide EMIS Data Review Series no 6, INSPEC (London: Institute of Electrical Engineers)
    • (1991) Properties of Indium Phosphide


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.