Structure and properties of As2S3 and As2Se3 glasses modified with Dy, Sm and Mn

Journal of Optoelectronics and Advanced Materials

Volumn 1, Issue 2, 1999, Pages 15-24

  Iovu, M ^a   Shutov, S ^a   Popescu, M ^b   Furniss, D ^c   Kukkonen, L ^c   Seddon, A B ^c  

^a Center of Optoelectronics   (Moldova)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Amorphous film; Arsenic selenide; Chalcogenide; Photoconductivity

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ARSENIC COMPOUNDS; CHALCOGENIDES; DYSPROSIUM; GLASS; MANGANESE COMPOUNDS; PHOTOCONDUCTIVITY; SAMARIUM; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRUCTURAL METALS;

ACTIVATION ENERGY OF CONDUCTIVITY; CHALCOGENIDE GLASSY SEMICONDUCTORS; FUNDAMENTAL ABSORPTION EDGE; MEDIUM RANGE ORDER; PHOTOCONDUCTIVITY SPECTRUM; PHOTOELECTRIC CHARACTERISTICS; SELENIDES; STRUCTURE AND PROPERTIES;

SULFUR COMPOUNDS;

EID: 0002968081     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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