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Volumn 57, Issue 1, 1998, Pages 14-17

High-pressure low-temperature phase transition in a doped para-terphenyl crystal: A spectral-hole-burning study

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EID: 0002923182     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.14     Document Type: Article
Times cited : (11)

References (32)
  • 20
    • 0020293646 scopus 로고
    • Note that a measured hole width δ (its zero-dose limit) is related to the homogeneous linewidth Γ of the respective ZPL by a simple expression (Formula presented) See, e.g., L. A. Rebane, A. A. Gorokhovskii, and J. V. Kikas, Appl. Phys. B: Photophys. Laser Chem. 29, 235 (1982).
    • (1982) Appl. Phys. B: Photophys. Laser Chem. , vol.29 , pp. 235
    • Rebane, L.1    Gorokhovskii, A.2    Kikas, J.3
  • 27
    • 85037881592 scopus 로고    scopus 로고
    • E. L. Chronister and B. J. Baer, in High-Pressure Science and Technology—1993, edited by S. C. Schmidt, J. W. Shaner, G. A. Samara, and M. Ross, AIP Conf. Proc. No. 309 (AIP, New York, 1994), Pt. 2, p. 1507.
    • AIP Conf. Proc. , vol.309
    • Chronister, E.1    Baer, B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.