Brittle-ductile behavior of single crystals of MoSi2

Materials Science and Engineering: A

Volumn 261, Issue 1-2, 1999, Pages 99-105

  Ito, K ^a   Matsuda, K ^a   Shirai, Y ^b   Inui, H ^a   Yamaguchi, M ^a  

^a KYOTO UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

MoSi2; Plastic deformation; Positron lifetime; Vacancies

Indexed keywords

EID: 0002906082     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(98)01054-5     Document Type: Article

References (28)

1. Vasudevan A.K., Petrovic J.J. Mater. Sci. Eng. A155:1992;1.
2. Ito K., Inui H., Shirai Y., Yamaguchi M. Philos. Mag. A72:1995;1075.
3. Ito K., Yano T., Nakamoto T., Inui H., Yamaguchi M. Intermetalllics. 4:1996;S119.
4. Bhattacharyya B. K., Bylander D. M., Kleinman L. Phys. Rev. B31:1985;7973.
5. K. Maex, R. De Keersmaecker, C. Claeys, J. Vanhellemont, P.F.A. Alkemade, Proc. Fifth Inter. Symp. Silicon Mater. Sci. and Tech.; Semiconductor Silicon, 1986, p. 346.
6. Matsuda K., Shirai Y., Yamaguchi M. Intermetallics. 4:1998;395.
7. Umakoshi Y., Sakagami T., Hirano T., Yamane T. Acta Metall. Mater. 38:1990;909.
8. Kimura K., Nakamura M., Hirano T. J. Mater. Sci. 25:1990;2487.
9. Mitchell T.E., Maloy S.A. Stoloff N.S. et al. Critical Issues in the Development of High Temperature Structural Materials. 1993;279 TMS, Warrendale, PA.
10. Maloy S.A., Mitchell T.E., Heuer A.H. Acta Metall. Mater. 43:1995;657.
11. Maloy S.A., Heuer A.H., Lewandowski J.J., Mitchell T.E. Acta Metall. Mater. 40:1992;3159.
12. K. Ito, Ph.D. Thesis, Kyoto University, 1996.
13. Chang H., Gibala R. Mater. Res. Soc. Symp. Proc. 322:1994;223.
14. Boldt P.H., Embury J.D., Weatherly G.C. Mater. Sci. Eng. A155:1992;251.
15. Rao S.I., Dimiduk D.M., Mendiratta M.G. Philos. Mag. A68:1993;1295.
16. Nakamura M., Matsumoto S., Hirano T. J. Mater. Sci. 25:1990;3309.
17. Maloy S.A., Mitchell T.E., Lewandowski J.J., Heuer A.H. Philos. Mag. Lett. 67:1993;313.
18. S. Guder, M. Bartsch, M. Yamaguchi, U. Messerschmidt, in this proceedings.
19. U. Messerschmidt, M. Bartsch, S. Guder, D. Häußer, R. Hauschalter, M. Yamaguchi, Intermetallics 6 (1998) 729.
20. Kirkegaard P., Eldrup M. Computer Phys. Commun. 3:1972;240.
21. Kirkegaard P., Eldrup M. Computer Phys. Commun. 7:1974;401.
22. Kirkegaard P., Eldrup M., Morgensen O.K., Pedersen N. Computer Phys. Commun. 23:1981;307.
23. 1993 Annual Book of ASTM Standards, American Society for Testing and Materials, Vol. 12.02, 1993, p. 171.
24. Rappaport P., Loferski J.J. Phys. Rev. 100:1955;1261.
25. Rappaport P., Loferski J.J. Phys. Rev. 98:1955;1861.
26. Corbett J.W. Electron Radiation Damage in Semiconductors and Metals. 1966;Academic Press, New York.
27. Seitz F., Koehler J.S. Seitz F., Turnbull D. Solid State Physics. 2:1956;Academic Press, New York.
28. Kad B.K., Vecchio K.S., Asaro R.J., Bewlay B.P. Philos. Mag. A72:1995;1.