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Volumn 216, Issue 1, 1992, Pages 72-76

Van der Waals epitaxy-a new epitaxial growth method for a highly lattice-mismatched system

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0002784212     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(92)90872-9     Document Type: Article
Times cited : (539)

References (22)
  • 17
    • 0026850793 scopus 로고
    • Hetero-epitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures
    • (1992) Surface Science , vol.26 , pp. 43
    • Ueno1    Abe2    Saiki3    Koma4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.