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Volumn , Issue , 1999, Pages 247-248
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"Genetically engineered" nanoelectronics
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
DIGITAL STORAGE;
ELECTRON TRANSPORT PROPERTIES;
FIELD EFFECT TRANSISTORS;
GENETIC ALGORITHMS;
HARDWARE;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
NANOELECTRONICS;
NASA;
OPTIMIZATION;
PARAMETER ESTIMATION;
PHOTODETECTORS;
QUANTUM CHEMISTRY;
QUANTUM THEORY;
QUANTUM WELL LASERS;
RESONANT TUNNELING;
RESONANT TUNNELING DIODES;
SEMICONDUCTOR QUANTUM WELLS;
STATISTICAL MECHANICS;
DESIGN AND OPTIMIZATION;
HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS;
NANOELECTRONIC DEVICES;
NON-EQUILIBRIUM ELECTRONS;
NUMERICAL EXPERIMENTS;
PARALLELIZED GENETIC ALGORITHMS;
QUANTITATIVE AGREEMENT;
STRUCTURAL VARIATIONS;
QUANTUM WELL INFRARED PHOTODETECTORS;
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EID: 0002781168
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/EH.1999.785460 Document Type: Conference Paper |
Times cited : (3)
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References (8)
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