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Volumn 69, Issue 26, 1996, Pages 4084-4086

Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si

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EID: 0002705705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117826     Document Type: Article
Times cited : (14)

References (21)
  • 8
    • 36549095567 scopus 로고
    • P. Sheldon, B. G. Yacobi, K. M. Jones, and D. J. Dunlavy, J. Appl. Phys. 58, 4186 (1985); R. D. Dupuis, J. C. Bean, J. M. Brown, A. T. Macrander, R. C. Miller, and L. C. Miller, J. Electron. Mater. 16, 69 (1987).
    • (1985) J. Appl. Phys. , vol.58 , pp. 4186
    • Sheldon, P.1    Yacobi, B.G.2    Jones, K.M.3    Dunlavy, D.J.4
  • 10
    • 3643130905 scopus 로고
    • D. J. Eaglesham and M. Cerullo, Phys. Rev. Let 64, 1943 (1990); D. J. Eaglesham and R. Hull, Mater. Sci. Eng. B 30, 197 (1995).
    • (1990) Phys. Rev. Let , vol.64 , pp. 1943
    • Eaglesham, D.J.1    Cerullo, M.2
  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.