Evidence for the void size related IR absorption frequency shifts in hydrogenated amorphous germanium films

Solid State Communications

Volumn 113, Issue 2, 1999, Pages 73-75

  Chou, Yu Pin ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A. Disordered systems; A. Semiconductors; A. Thin films

Indexed keywords

HYDROGENATION; INFRARED RADIATION; LIGHT ABSORPTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM;

HYDROGENATED AMORPHOUS GERMANIUM ALLOYS;

SEMICONDUCTING FILMS;

EID: 0002680485     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1098(99)00443-3     Document Type: Article

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