Grating-tuned semiconductor MOPA lasers for precision spectroscopy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2834, Issue , 1996, Pages 34-40

  Marquardt, J H ^a   Cruz, F C ^a   Stephens, M ^a   Oates, C W ^a   Hollberg, L W ^a   Bergquist, J C ^a   Welch, D F ^b   Mehuys, D ^b   Sanders, S ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b SDL INC   (United States)

Author keywords

Diode lasers; High resolution spectroscopy; Injection locking; Mopa; Tapered amplifiers

Indexed keywords

DIODE AMPLIFIERS; LIGHT SOURCES; OPTICAL PHASE CONJUGATION; POWER AMPLIFIERS; PROCESS CONTROL; PROCESS MONITORING; SEMICONDUCTOR DIODES; SPECTROSCOPIC ANALYSIS;

EXTENDED CAVITY DIODE LASERS; HIGH-RESOLUTION SPECTROSCOPY; INJECTION-LOCKING; MASTER OSCILLATOR POWER AMPLIFIER SYSTEMS; MOPA; SPECTRAL CHARACTERISTICS; SPECTROSCOPIC APPLICATION; TAPERED AMPLIFIER;

SEMICONDUCTOR LASERS;

EID: 0002668730     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.255336     Document Type: Conference Paper

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