Calculation of hot electron distributions in silicon by means of an evolutionary algorithm

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5061-5066

  Jakumeit, J ^a,b   Ravaioli, U ^a   Hess, K ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b UNIVERSITY OF COLOGNE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002663502     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363551     Document Type: Article

References (14)

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2. K. Hess, Advanced Theory of Semiconductor Devices (Prentice-Hall,) Englewood Cliffs, NJ, 1988).
3. H. Shichijo and K. Hess, Phys. Rev. B 23, 4207 (1981).
4. Monte Carlo Device Simulation: Full Band and Beyond, edited by K. Hess (Kluwer, Boston, MA, 1991).
5. J. D. Bude and M. Mastrapasqua, IEEE Electron Device Lett. EDL-16, 439 (1995).
6. See, for example, S. E. Laux and M. V. Fischetti, in Monte Carlo Device Simulation: Full Band and Beyond, edited by K. Hess (Kluwer, Boston, MA, 1991), Chap. 1.
7. C. Hu, in Advanced MOS Device Physics, edited by N. G. Einspruch and G. S. Gildenblat (Academic, San Diego, CA, 1989).
8. E. Michielssen, J.-M. Sajer, S. Ranjithan, and R. Mittra, IEEE Trans. Microwave Theory Tech. MTT-41, 1024 (1993).
9. D. E. Goldberg, Genetic Algorithms in Search, Optimization and Machine Learning (Addison-Wesley, Reading, MA, 1989).
10. Z. Michalowics, Genetic algorithms+Data structure=Evolution Programs (Springer, New York, 1994).
11. J. Jakumeit, Appl. Phys. Lett. 66, 1812 (1995).
12. P. J. M. Laarhoven and E. H. L. Aarts, Simulated Annealing: Theory and Applications (Kluwer, Dordrecht, The Netherlands, 1987).
13. J. Bude, K. Hess, and G. J. Iafrate, Phys. Rev. B 45, 10 958 (1992).
14. C. Huang, T. Wang, C. N. Chen, M. C. Chang, and J. Fu, IEEE Trans. Electron Devices 39, 2562 (1992).