Simulated growth process of single-crystal diamond at high pressure

Diamond and Related Materials

Volumn 5, Issue 1, 1996, Pages 56-64

  Wakatsuki, Masao ^a   Li, Wei ^a   Gohda, Yasushi ^a,b   Ding, Li Ye ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^c SICHUAN UNIVERSITY   (China)

Author keywords

Crystal growth; High pressure synthetic diamond; Modelling; Solution growth

Indexed keywords

EID: 0002634906     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(96)80006-9     Document Type: Article

References (12)

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