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Applied Physics Letters

Volumn 52, Issue 1, 1988, Pages 36-38

Measurement of ultrafast hot-carrier relaxation in silicon by thin-film-enhanced, time-resolved reflectivity

(2) Doany, F E a Grischkowsky, D a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002463206 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.99309 Document Type: Article

Times cited : (63)

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