The role of impurities in refined ZnSe and other II-VI semiconductors

Journal of Crystal Growth

Volumn 59, Issue 1-2, 1982, Pages 15-26

  Bhargava, R N ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002416844     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(82)90304-9     Document Type: Article

References (122)

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2. Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
3. Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
4. The Use of Metal-Organics in the Preparation of Semiconductor Materials
5. Film Deposition by Molecular-Beam Techniques
6. Preparation and Properties of ZnS-Type Crystals from the Melt
7. Preparation of a Large Single Crystal of ZnSe from the Melt
8. Vapor growth of II–VI compounds and the identification of donors and acceptors
9. Pair Spectra and the Shallow Acceptors in ZnSe
10. Epitaxial Growth of ZnSe on GaAs
11. The Epitaxy of ZnSe on Ge, GaAs, and ZnSe by an HCl Close-Spaced Transport Process
12. Thick Epitaxial Films of Cubic ZnSe and ZnS by Vapor Phase Transport
13. Vapor-Phase Epitaxial Growth of CdSe on Sapphire and CdS
14. Preparation and Optical Properties of ZnSe Epitaxial Layers by a Close-Spaced Technique
15. Epitaxial Growth of ZnSe by Vapor Flow Method
16. Nitrogen as shallow acceptor in ZnSe grown by organometallic chemical vapor deposition
17. Synthesis and growth of ZnS, ZnSe, ZnTe, GaS, Ga2Se3 and InS crystals in Ga and in melts
18. Near Band-Edge Luminescence in ZnSe Grown from Gallium Solution
19. Liquid-phase epitaxy of CdSe, ZnSe and ZnTe layers
20. Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent
21. Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
22. Molecular Beam Epitaxy of ZnSe and ZnTe Thin-Film Single Crystals
23. Abstracts Electronic Materials Conf.
24. SEM and TEM: Diffusion of lithium in ZnTe
25. Electrical, SEM, and TEM studies on ZnTe. II. Impurity segregation during long annealing
26. Optical Properties of Substitutional Donors in ZnSe
27. Excited states of shallow acceptors in ZnSe
28. Recent News Paper No. 560
29. Extended Abstract
30. Phosphorus and Arsenic Impurity Centers in ZnSe. II. Optical and Electrical Properties
31. Recent Newspaper 563
32. Diffusion of Electrically and Optically Active Defect Centers in II-VI Compounds
33. The electron trap associated with an anion vacancy in ZnSe and ZnSxSe1−x