Selective metallization of silica surfaces by copper CVD using a chemical affinity pattern created by gas phase silylation and UV exposure

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 15-23

  Doppelt, Pascal ^a   Stelzle, Martin ^b  

^a PSL RESEARCH UNIVERSITY   (France)

^b MAX PLANCK INSTITUTE OF COLLOIDS AND INTERFACES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; LITHOGRAPHY; MASKS; METALLIZING; MONOLAYERS; SILANES; SILICA; ULTRAVIOLET RADIATION;

GAS PHASE SILYLATION;

MICROELECTRONIC PROCESSING;

EID: 0002349480     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00026-3     Document Type: Article

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