PtSi Schottky-barrier infrared focal plane arrays

Opto-Electronics Review

Volumn 1998, Issue 1, 1998, Pages 1-10

  Kimata, M ^a   Ueno, M ^a   Yagi, H ^a   Shiraishi, T ^a   Kawai, M ^a   Endo, K ^a   Kosasayama, Y ^a   Sone, T ^a   Ozeki, T ^a   Tsubouchi, N ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002215125     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (26)

1. A. Rogalski: III-V Detectors, in Infrared Photon Detectors, pp. 351-390, ed. A. Rogalski (SPIE Press, Bellingham, Washington (1995).
2. xTe Detectors, in Infrared Photon Detectors, pp. 391-493, ed. A. Rogalski, SPIE Press, Bellingham, Washington (1995).
3. F. F. Sizov: Semiconductor superlattice and quantum well detectors, in Infrared Photon Detectors, pp. 561-623, ed. A. Rogalski, SPIE Press, Bellingham, Washington (1995).
4. M. Kimata and N. Tsubouchi: Schottky-barrier photoemissive detectors, in Infrared Photon Detectors, pp. 299-349, ed. A. Rogalski, SPIE Press, Bellingham, Washington (1995).
5. F. D. Shepherd and A. C. Yang: Silicon Schottky retinas for infrared imaging, Tech. Digest of IEDM (1973) 310.
6. B. Capone, L. Skolnik, R. Taylor, F. Shepherd, S. Roosild, W. Ewing, W. Kosonocky and E. Kohn: Evaluation of a Schottky IRCCD staring mosaic focal plane, Proc. SPIE 156 (1978) 120.
7. M. Kimata, M. Denda, N. Yutani, S. Iwade and N. Tsubouchi: A 512 × 512 element PtSi Schottky-barrier infrared image sensor, IEEE JSSC SC-22 (1987) 1124.
8. D. J. Sauer, F. L. Hsueh, F. V. Shallcross, G. M. Meray and T. S. Villani: A 640 × 480-element PtSi IR sensor with low-noise MOS X-Y addressable multiplexer, Proc. SPIE1308 (1990) 81.
9. H. Elabd, Y. Abedini, W. Shieh, J. Kim, M. Shih, J. Chiu, F. Nicol, W. Petro, J. Lehan, M. Duron, M. Manderson, S. Otto, C. Diaz, S. Lam, H. Balopole, P. Coyle, P. Cheng and R. Marin: 488 × 512-and 244 × 256-element monolithic PtSi Schottky IR focal plane array, presented at SPIE Symp. No. 1107-29 (1989).
10. E. T. Nelson, K. Y. Wong, S. Yoshizumi, D. Rockaffelow, W. DesJadin, M. Elzinga, J. P. Lavine, T. J. Tredwell, R. P. Khosla, P. Sorie, B. Howe, S. Brickman and S. Refermat: Wide field of view PtSi infrared focal plane array, Proc. SPIE 1308 (1990) 36.
11. K. Konuma, S. Tohyama, A. Tanabe, K. Masubuchi, N. Teranishi, T. Saito and T. Muramatsu: A 648 × 487 pixel Schottky-barrier infrared CCD image sensor, Tech. Digest of ISSCC (1991) 216.
12. W-L. Wang, R. Winzenread, B. Nguyen and J. J. Murrin: High fill factor 512 × 512 PtSi focal plane array, Proc. SPIE 1161 (1989) 79.
13. J. L. Gates, W. G. Connelly, T. D. Franklin, R. E. Mills, F. W. Price and T. Y. Wittwer: 488 × 640-element hybrid platinum suicide Schottky focal plane array, Proc. SPIE 1540 (1991) 262.
14. N. Yutani, H. Yagi, M. Kimata, J. Nakanishi, S. Nagayoshi and N. Tsubouchi: 1040 × 1040 element PtSi Schottky-barrier IR image sensor, Tech. Digest of IEDM (1991) 175.
15. M. Kimata, N. Yutani, N. Tsubouchi and T. Seto: High performance 1040 × 1040 element PtSi Schottky-barrier image sensor, Proc. SPIE 1762 (1992) 350.
16. T. Seto, A. Mori, R. Ishigaki, S. Itoh, N. Yutani, M. Kimata, N. Tsubouchi, A. Akiyama and T. Sasaki, Performance of IM-IRCSD imager with PtSi Schottky-barrier detectors, Proc. SPIE 2020 (1993) 404.
17. H. Yagi, N. Yutani, S. Nagayoshi, J. Nakanishi, M. Kimata and N. Tsubouchi: Improved 512 × 512 IRCSD with large fill factor and high saturation level, Proc. SPIE 1685 (1992) 37.
18. J. M. Mooney and J. Silverman: The theory of hot-electron photoemission in Schottky-barrier IR detectors, IEEE Trans. Electron Devices ED-32 (1985) 33.
19. P. W. Pellegrini, A. Golubovic and C. E. Ludington: A comparison of iridium suicide and platinum suicide photodiodes, Proc. SPIE 782 (1987) 93.
20. W. F. Kosonocky, H. Elabd, H. G. Erhardt, F. V. Shallcross, T. Villani, G. Meray, M. J. Cantella, J. Klein and N. Roberts: 64 × 128-element high-performance PtSi IR-CCD image sensor, Tech. Digest of IEDM (1981) 702.
21. H. Yagi, T. Shiraishi, K. Endo, Y. Kosasayama, M. Kimata and T. Ozeki: High-performance 801 × 512-element PtSi Schottky-barrier infrared image sensor, Tech. Digest of 15th Sensor Symp. (1997) 155.
22. M. Inoue, T. Seto, S. Takahashi, S. Ito, H. Yagi, T. Shiraishi, K. Endo and M. Kimata: Portable high performance camera with 801 × 512 PtSi-SB IRCSD, Proc. SPIE 3179 (1997) 150.
23. M. Kimata, M. Denda and N. Tsubouchi: High-density Schottky-barrier infrared image sensor, Sensors and Actuators A21-A23 (1990) 451.
24. K. Yanagisawa, N. Itoh and T. Ichikawa: Evaluation of the 1040 × 1040 PtSi CSD for astronomical use, Proc. SPIE 2744 (1996) 92.
25. M. Denda, M. Kimata, S. Iwade, N. Yutani, T. Kondo and N. Tsubouchi: Schottky-barrier infrared linear image sensor with 4-band × 4096-element, IEEE Trans. Electron Devices 38 (1991) 1131.
26. M. Ueno, T. Shiraishi, M. Kawai, Y. Yonada, M. Kimata and M. Nunoshita: PtSi Schottky-barrier infrared focal plane array for ASTER/SWIR, Proc. SPIE 2553 (1995) 56.