Copper may destroy chip-level reliability: handle with care - Mechanism and conditions for copper migrated resistive short formation

IEEE Electron Device Letters

Volumn 20, Issue 1, 1999, Pages 5-8

  Harsányi, Gábor ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

Copper metallization; Electrochemical migration; Reliability physics

Indexed keywords

EID: 0002107811     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.737556     Document Type: Article

References (2)

1. S. S. Wong, J. H. Cho, H. Kang, and C. Ryu, "Reliability of CVD copper interconnections," in Proc. Int. Conf. Electron. Mater., IUMRS-ICEM, E 2.2, 1994.
2. R. C. Benson, B. M. Romenesko, J. A. Weiner, B. H. Nall, and H. K. Charles, Jr., "Metal electromigration induced by solder flux residue in hybrid microcircuits," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 10, pp. 363-370, 1988.