Progress in silicon-to-silicon direct bonding and its application to synchrotron x-ray optics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3151, Issue , 1997, Pages 54-64

  Graber, Timothy ^a,d   Krasnicki, S F ^a   Fernandez, Patricia B ^a   Mills, Dennis M ^a   Tong, Qin Yi ^b,c   Gösele, Ulrich M ^b,c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b Duke University   (United States)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d UNIVERSITY OF CHICAGO   (United States)

Author keywords

High heat flux optics; Silicon to silicon direct bonding; Synchrotron radiation; X ray monochromator

Indexed keywords

ELECTROMAGNETIC WAVES; HEAT FLUX; MONOCHROMATORS; NONMETALS; OPTICAL RESOLVING POWER; OPTICS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; STRAIN; SYNCHROTRON RADIATION; SYNCHROTRONS; THERMONUCLEAR REACTIONS; X RAYS;

BONDING PROCESSES; BONDING TECHNIQUES; CRYSTAL SILICON; HIGH-HEAT-FLUX OPTICS; INSERTION DEVICES; RADIATION BEAMS; RAY OPTICS; ROOM-TEMPERATURE (RT); SEMICONDUCTOR INDUSTRIES; SILICON CRYSTALS; SILICON-TO-SILICON DIRECT BONDING; SYNCHROTRON X RAYS; X RAY OPTICAL ELEMENTS; X-RAY MONOCHROMATOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0002041502     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.294498     Document Type: Conference Paper

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11. The epoxy used is 3M Scotch-weld 1838 B/A green epoxy.
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