Interpretation of the magnetoresistance in doped magnetic tunnel junctions

European Physical Journal B

Volumn 25, Issue 1, 2002, Pages 5-10

  Vedyayev, A ^a,b   Vlutters, R ^a,c   Ryzhanova, N ^b   Lodder, J C ^c   Dieny, B ^a  

^a CEA GRENOBLE   (France)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002024035     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/e10051-002-0001-2     Document Type: Article

References (11)

1. R. Jansen, J.S. Moodera, J. Appl. Phys. 83, 6682 (1998).
2. E.Y. Tsymbal, D.G. Pettifor, J. Appl. Phys. 85, 5801 (1999).
3. M.B. Stearns, J. Magn. Magn. Mater. 167 (1977).
4. J.C. Slonczewsky, Phys. Rev. B 39, 6995 (1989).
5. A. Vedyayev et al. Europhys. Lett. 46, 808 (1999).
6. P.A. Lee, D.S. Fisher, Phys. Rev. Lett. 47, 882 (1981).
7. P. Soven, Phys. Rev. 156, 809 (1967).
8. B. Velicky, Phys. Rev. 184, 614 (1969).
9. H.A. Fertig, S. Das Sarma, Phys. Rev. B. 40, 2410 (1989).
10. P.A. Cox, Transition metal oxides. An introduction to their electronic structure and properties (Clarendon, Oxford, 1992).
11. S. Zhang, P.M. Levy, A.C. Marley, S.S.P. Parkin, Phys. Rev. Lett. 79, 3744 (1997).