Effect of cross capacitance in three-junction single-electron transistors

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 3, 1999, Pages 1629-1632

  Kim, J ^c   Kim, KyuTae ^a   Yoo, KyungHwa ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungbuk National University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001953092     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.1629     Document Type: Article

References (17)

1. D. V. Averin and K K. Likharev, in Mesoscopic Phenomena in Solids, edited by B. L. Altshuler, P. A. Lee, and R. A. Webb (Elsevier, Amsterdam, 1991), p. 173.
2. Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992).
3. J. P. Pekola, K P. Hirvi, J P. Kauppinen, and M A. Paalanen, Phys. Rev. Lett.73, 2903 (1994).
4. G. J. Dolan, Appl. Phys. Lett.31, 337 (1977).
5. D. Song, Ph.D. thesis, University of Maryland at College Park, 1997.
6. J. M. Hergenrother, Ph.D. thesis, Harvard University, 1995.
7. Ju-Jin Kim/, J. Korean Phys. Soc.33, 514 (1998).
8. V. Chandrasekhar, Z. Ovadyahu, and R A. Webb, Phys. Rev. Lett.67, 2862 (1991).
9. L. I. Glazman and V. Chandrasekhar, Europhys. Lett.19, 623 (1992);
10. I. M. Ruzin, V. Chandrasekhar, E I. Levin, and L I. Glazman, Phys. Rev. B45, 13 469 (1992).
11. L. J. Geerligs, V F. Anderegg, and J E. Mooij, Physica (Utrecht)165 & 166, 973 (1990).
12. F. R. Waugh, Phys. Rev. Lett.75, 705 (1995);
13. F. Hofman, Phys. Rev. B51, 13 872 (1995);
14. C. Livermore, et al., Science274, 1332 (1996),
15. R. H. Blick, Phys. Rev. Lett.80, 4032 (1998).
16. M. W. Keller, J M. Martinis, N M. Zimmerman, and A H. Steinbach, Appl. Phys. Lett.69, 1804 (1996).
17. Single Electron Devices and Circuit Simulator, wasshuber@iue.tuwien.ac.at