Induced damage by high energy heavy ion irradiation at the GANIL accelerator in semiconductor materials

Nuclear Inst. and Methods in Physics Research, B

Volumn 63, Issue 1-2, 1992, Pages 14-20

  Levalois, M ^a   Bogdanski, P ^a   Toulemonde, M ^b  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

^b Centre Interdisciplinaire de Recherche Ions Lasers   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001834184     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(92)95160-S     Document Type: Article

References (21)

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2. Threshold energy for atomic displacement in electron irradiated germanium
3. Design curves for predicting fast-neutron-induced resistivity changes in silicon
4. Electrical behavior of fast neutron irradiated semi-insulating GaAs during thermal recovery
5. E-MRS 1991 Spring Meeting Strasbourg France Symp C
6. these Proceedings E-MRS 1991 Spring Meeting, Strasbourg, France, Symposium F: Nuclear Methods in Semiconductor Physics
7. these Proceedings E-MRS 1991 Spring Meeting, Strasbourg, France, Symposium F: Nuclear Methods in Semiconductor Physics
8. Oxydes ferrimagnétiques: synthèse et effets d'irradiation par les ions lourds du GANIL
9. Etude de l'endommagement induit dans le silicium par des ions lourds de grande énergie