Ultrathin Cu films on Si(111): Schottky barrier formation and sensor applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1683-1687

  Nienhaus, H ^a,b   Bergh, H S ^a   Gergen, B ^a   Majumdar, A ^c   Weinberg, W H ^a   McFarland, E W ^a  

^a University of California   (United States)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001748355     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581872     Document Type: Article

References (24)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
2. H. Nienhaus, H. S. Bergh, B. Gergen, A. Majumdar, W. H. Weinberg, and E. W. McFarland, Phys. Rev. Lett. 82, 446 (1999).
3. W. Göpel and K. D. Schierbaum, in Sensors, edited by W. Göpel, J. Hesse, and J. N. Zemel (VCH, Weinheim, 1991), Vol. 2, p. 429ff.
4. P. F. Ruths, S. Ashok, S. J. Fonash, and J. M. Ruths, IEEE Trans. Electron Devices ED-28, 1003 (1981).
5. B. B. Kuliev, B. Lalevic, M. Yousuf, and D. M. Safarov, Sov. Phys. Semicond. 17, 875 (1983).
6. M. Prietsch, Phys. Rep. 253, 163 (1995) and references therein.
7. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).
8. P. Niedermann, L. Quattropani, K. Solt, I. Maggio-Aprile, and Ø. Fischer, Phys. Rev. B 48, 8833 (1993).
9. N. Toyama, T. Takahashi, H. Murakami, and H. Koriyama, Appl. Phys. Lett. 46, 557 (1985).
10. N. Toyama, J. Appl. Phys. 63, 2720 (1988).
11. H. S. Bergh, B. Gergen, H. Nienhaus, A. Majumdar, W. H. Weinberg, and E. W. McFarland, Rev. Sci. Instrum. (to be published).
12. H. Nienhaus, B. Gergen, H. S. Bergh, A. Majumdar, W. H. Weinberg, and E. W. McFarland, J. Vac. Sci. Technol. A (to be published).
13. M. P. Lepselter and S. M. Sze, Bell Syst. Tech. J. 47, 195 (1968).
14. R. F. Schmitsdorf, T. U. Kampen, and W. Mönch, Surf. Sci. 324, 249 (1995).
15. R. F. Schmitsdorf, T. U. Kampen, and W. Mönch, J. Vac. Sci. Technol. B 15, 1221 (1997).
16. M. O. Aboelfotoh, A. Cros, B. G. Svensson, and K. N. Tu, Phys. Rev. B 41, 9819 (1990).
17. J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham, J. Appl. Phys. 70, 7403 (1991).
18. P. Lahnor, K. Seiter, M. Schulz, W. Dorsch, and R. Scholz, Appl. Phys. A: Mater. Sci. Process. 61, 369 (1995).
19. W. Mönch, Semiconductor Surfaces and Interfaces, 2nd ed. (Springer, Berlin, 1995).
20. N. Hishinuma, Rev. Sci. Instrum. 52, 313 (1981).
21. K. C. Harvey and C. Fehrenbach, Jr., Rev. Sci. Instrum. 54, 1117 (1983).
22. J. C. Macfarlane, J. Vac. Sci. Technol. 5, 118 (1968).
23. W. L. Gardner, J. Vac. Sci. Technol. A 13, 763 (1995).
24. V. P. Ershov, V. V. Fimushkin, M. V. Kulikov, Yu. K. Pihpenko, and V. B. Shutov, Nucl. Instrum. Methods Phys. Res. A 385, 435 (1997).