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Journal of Applied Physics

Volumn 77, Issue 7, 1995, Pages 3445-3449

Model of etching profiles for ion energy flux dependent etch rates in a collisionless plasma sheath

(2) Abraham Shrauner, Barbara a Wang, Chungdar Daniel a

a WASHINGTON UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001741313 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.358637 Document Type: Article

Times cited : (11)

References (13)

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4
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- Jurgensen, C.W.¹ Shaqfeh, E.S.C.²

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- Graves, D.B.¹ Wu, H.² Porteus, R.K.³

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- 2nd ed., (Addison-Wesley, Redwood City, CA)
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- Wolfram, S.¹

11
- 0003851731
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12
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13
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- Gibson, G.W.¹ Sawin, H.H.² Tepermeister, I.³ Ibbotson, D.E.⁴ Lee, J.T.C.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.