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It is to be noted, in this connection, that the photocharging of small semiconductor particles deposited on an insulating support or in the form of a suspension in an aqueous electrolyte has been reported previously to produce a shift of the absorption edge toward shorter wavelengths (the so-called Burnstein shift) (cf.: Liu, C. Y.; Bard, A. J. J. Phys. Chem. 1989, 93, 3232 and references therein). This effect was assigned to a shift of the Fermi level into the conduction band of the semiconductor due to the increased electron concentration within the nanoparticles. Interestingly, in the case when the irradiated dispersion of a CdS colloid contained an efficient hole scavenger and no electron acceptor other than water molecules (i.e., a situation similar to that of the nanostructured anatase film illuminated in a deaerated solution of formic acid), the relaxation of the colloid in the dark to a nondegenerate state was quite slow, taking several seconds.
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The situation prevailing in the umlluminated region of the film, located between the outer part absorbing the UV light and the back contact, and that in the dye-sensitized film irradiated with the white light are both characterized by the virtual absence of minority charge carriers.
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