In situ characterization of the growing a-Si:H surface by IR spectroscopy

Journal of Non-Crystalline Solids

Volumn 137-138, Issue PART 2, 1991, Pages 765-770

  Toyoshima, Yasutake ^a   Arai, Kazuo ^a   Matsuda, Akihisa ^a   Tanaka, Kazunobu ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001718953     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(05)80233-9     Document Type: Article

References (10)

1. Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
2. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon