SCOPUS 정보 검색 플랫폼

Volumn 36, Issue 7, 1980, Pages 580-582

Evidence for tunneling in reverse-biased III-V photodetector diodes

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001714449 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.91553 Document Type: Article

Times cited : (129)

References (14)

6
- 0017679163
- edited by Willardson and Beers (Academic, New York,)
- (1977) Semiconductors and Semimetals , vol.12 , pp. 291
- Stillman, G.E.¹ Wolfe, C.M.²

7
- 0004214285
- (McGraw‐Hill, New York)
- (1964) Physics of Semiconductors
- Moll, J.L.¹

8
- 84950816377
- Note added during review: We have found that for [formula omitted] As, current is proportional to area, as predicted in Eq. (1). On reducing the diode mesa area one order of magnitude by etching, the dark current at [formula omitted] was reduced from 28 to [formula omitted] This behavior eliminates the surface as a significant source of dark current.

9
- 84950858701
- Measurement of the junction doping profile via capacitance‐voltage techniques for several devices indicates the number of ionized impurities, and therefore electric field, is temperature independent from 77 to 450 K. This supports the claim that constant applied voltage implies constant electric field.

10
- 0004005306
- For InP, [formula omitted] see (Wiley, New York,)
- (1969) Physics of Semiconductor Devices
- Sze, S.M.¹

11
- 0012097290
- for [formula omitted] see
- (1979) Appl. Phys. Lett , vol.35 , pp. 772
- Brendecke, H.¹ Stormer, H.L.² Nelson, R.J.³

12
- 84950754554
- and for [formula omitted] see (unpublished)
- Temkin, H.¹ Keramidas, V.G.²

13
- 84950898344
- Here, [formula omitted] is the reduced effective mass of the electron in the valence and conduction bands

14
- 0009457452
- (1966) Int. J. Electron , vol.20 , pp. 583
- Riben, A.R.¹ Feucht, D.L.²

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