SIMS depth profiling of vertical p-channel Si-MOS transistor structures

Fresenius' Journal of Analytical Chemistry

Volumn 358, Issue 1-2, 1997, Pages 203-207

  Zastrow, U ^a   Loo, R ^a   Szot, K ^a   Moers, J ^a   Grabolla, T ^b   Behammer, D ^c   Vescan, L ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IHP   (Germany)

^c RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001699339     PISSN: 09370633     EISSN: None     Source Type: Journal    
DOI: 10.1007/s002160050384     Document Type: Article

References (9)

1. Loo R, Vescan L, Behammer D, Moers J, Grabolla T, Langen W, Klaes D, Zastrow U, Kordos P, Lüth H (1996) Thin Solid Films. Proc. E-MRS, Strasbourg (in press)
2. Wilson RG, Stevie FA, Magee CW (1989) In: Secondary Ion Mass Spectrometry: A practical handbook for depth profiling and bulk impurity analysis. Wiley, New York, p 2.11-1
3. Kobayashi J, Nakajima M, Ishida K (1988) J Vac Sci Technol A6:86
4. Miethe K, Hoinkis O, Gries WH (1992) In: Benninghoven A, Janssen KTF, Tumpner J, Werner HW (eds) Secondary Ion Mass Spectrometry, SIMS VIII. Wiley, Chichester, pp 231
5. Wittmaack K (1994) Surf Interf Anal 21:323
6. Zalm PC (1992) In: SIMS VIII (see Ref. [4]), pp 307
7. Meuris M, De Bisschop P, Vandervorst W (1993) Surf Interf Anal 20:206
8. Pamler W, Wangemann K (1992) Surf Interf Anal 18:52
9. Benninghoven A, Rüdenauer FG, Werner HW (1987) In: Secondary Ion Mass Spectrometry: Basic concepts, Instrumental Aspects, Applications and Trends. Wiley, Chichester, p 224