Near-band-edge resonant states of AlAs monolayers embedded in bulk GaAs: The role of symmetries

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 7, 1998, Pages 3733-3736

  Di Ventra, Massimiliano ^a   Baldereschi, Alfonso ^a  

^a UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001680119     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.3733     Document Type: Article

References (13)

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4. S. H. Wei and A. Zunger, Phys. Rev. Lett. 59, 144 (1987).
5. We used the following parameters [all energies are in eV and the notation is the same as in P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983)], for GaAs, (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented); for AlAs, (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), (Formula presented), and (Formula presented).
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12. M. Di Ventra and A. Baldereschi, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmerman (World Scientific, Singapore, 1996).
13. M. Di Ventra and M. Sassoli de Bianchi (unpublished).