Resonant tunneling between parallel, two-dimensional electron gases: A new approach to device fabrication using in situ ion beam lithography and molecular beam epitaxy growth

Applied Physics Letters

Volumn 64, Issue 14, 1994, Pages 1827-1829

  Brown, K M ^a   Linfield, E H ^a   Ritchie, D A ^a   Jones, G A C ^a   Grimshaw, M P ^a   Pepper, M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

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EID: 0001672436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111768     Document Type: Article

References (8)