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Applied Physics Letters

Volumn 67, Issue , 1995, Pages 2957-

Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands

(4) Fujiwara, A a Takahashi, Y a Murase, K a Tabe, M a,b

a NTT CORPORATION (Japan)

b SHIZUOKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001670467 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.114824 Document Type: Article

Times cited : (61)

References (18)

1
- 0022661686
- (1986) J. Low Temp. Phys. , vol.62 , pp. 345
- Averin, D.V.¹ Likahrev, K.K.²

2
- 33744733611
- (1987) IEEE Trans. Mag , vol.MAG-23 , pp. 1142
- Likharev, K.K.¹

3
- 21544465440
- (1992) Appl. Phys. Lett. , vol.72 , pp. 4399
- Tucker, J.R.¹

4
- 0001630171
- (1987) Phys. Rev. Lett. , vol.59 , pp. 109
- Fulton, T.A.¹ Dolan, G.J.²

5
- 0000173379
- (1989) Phys. Rev. Lett. , vol.63 , pp. 1861
- Delsing, P.¹ Likharev, K.K.² Kuzmin, L.S.³ Claeson, T.⁴

6
- 11944259150
- (1990) Phys. Rev. Lett. , vol.65 , pp. 771
- Meriav, U.¹ Kastner, M.A.² Wind, S.J.³

7
- 0001051084
- (1993) Phys. Rev. Lett. , vol.70 , pp. 1311
- Field, M.¹ Smith, C.G.² Pepper, M.³ Ritchie, D.A.⁴ Frost, J.E.F.⁵ Jones, G.A.C.⁶ Hasko, D.C.⁷

8
- 0002433791
- (1994) Appl. Phys. Lett. , vol.64 , pp. 586
- Matsuoka, H.¹ Ichiguchi, T.² Yoshimura, T.³ Takeda, E.⁴

9
- 21544435847
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2119
- Ali, D.¹ Ahmed, H.²

10
- 0000417597
- (1994) Phys. Rev. Lett. , vol.72 , pp. 3226
- Dresselhaus, P.D.¹ Ji, L.² Han, S.³ Lukens, J.E.⁴ Likharev, K.K.⁵

11
- 0027547903
- (1993) Electron. Lett. , vol.29 , pp. 384
- Nakazato, K.¹ Blaikie, R.J.² Cleaver, J.R.A.³ Ahmed, H.⁴

12
- 0028514569
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1628
- Yano, K.¹ Ishii, T.² Hashimoto, T.³ Kobayashi, T.⁴ Murai, F.⁵ Seki, K.⁶

13
- 84950575201
- (1994) IEDM Tech. Dig , vol.938
- Takahashi, Y.¹ Nagase, M.² Namatsu, H.³ Kurihara, K.⁴ Iwadate, K.⁵ Nakajima, Y.⁶ Horiguchi, S.⁷ Murase, K.⁸ Tabe, M.⁹

14
- 0029206925
- (1995) Electron. Lett. , vol.31 , pp. 136
- Takahashi, Y.¹ Nagase, M.² Namatsu, H.³ Kurihara, K.⁴ Iwadate, K.⁵ Nakajima, Y.⁶ Horiguchi, S.⁷ Murase, K.⁸ Tabe, M.⁹

15
- 0006101319
- The Electrochemical Society, Pennington, NJ
- (1994) Silicon-On-Insulator for Technology and Devices , pp. 191
- Nagase, M.¹ Ishiyama, T.² Murase, K.³

16
- 84950575200
- Strictly speaking, hysteresis happens only when CBs at more than two tunnel junctions are successively broken one after another. For the circuit shown in Fig. 1(b), hysteresis occurs in two cases. One is when an electron first enters the SET island from the source (drain) and the resultant breakdown of the CB between the SET and the satellite islands enables an electron to tunnel into the satellite island. The other is when an electron tunnels from the SET island to the satellite island first and the electrons remaining in the SET island are complemented by an electron tunneling from the source (drain)

17
- 35949025938
- (1984) Phys. Rev. Lett. , vol.52 , pp. 228
- Ralls, K.S.¹ Skocpol, W.J.² Jackel, D.L.³ Howard, R.E.⁴ Fetter, L.A.⁵ Epworth, R.W.⁶ Tennant, D.M.⁷

18
- 0005304553
- (1987) Phys. Rev. Lett. , vol.25 , pp. 2255
- Farmer, K.R.¹ Rogers, C.T.² Buhrman, R.A.³

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