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Volumn 58, Issue 8, 1998, Pages 4589-4598

Surface electronic structure of a step-well-basis superlattice

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EID: 0001652777     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.4589     Document Type: Article
Times cited : (16)

References (45)
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    • P.-F. Yuh and K. L. Wang, J. Appl. Phys. 65, 4377 (1989).
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  • 9
    • 0000611050 scopus 로고
    • P.-F. Yuh and K. L. Wang, Phys. Rev. B 38, 13 307 (1988).
    • (1988) Phys. Rev. B , vol.38 , pp. 13307
    • Wang, K.1
  • 16
    • 0000734165 scopus 로고
    • J.-J. Shi and S.-H. Pan, Phys. Rev. B 48, 8136 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 8136
  • 30
    • 0001524349 scopus 로고
    • R. H. Yu, Phys. Rev. B 47, 1379 (1993).
    • (1993) Phys. Rev. B , vol.47 , pp. 1379
    • Yu, R.1
  • 44
    • 0001333927 scopus 로고
    • The same results have also been reviewed by P. Masri in Ref. 28
    • P. Masri and M. D. Rahmani, Phys. Rev. B 40, 1175 (1989). The same results have also been reviewed by P. Masri in Ref. 28.
    • (1989) Phys. Rev. B , vol.40 , pp. 1175
    • Masri, P.1    Rahmani, M.2
  • 45
    • 0000092166 scopus 로고
    • In practice, growing of (Formula presented) layer after GaAs layer, and followed by AlAs layer is a preferred sequence for AlGaAs-based ternary SL’s, as (Formula presented) tends to form relatively rough surfaces, while AlAs has a smoothing effect on the surface before GaAs is grown again [after D. J. Lockwood, R. L. S. Devine, A. Rodriguez, J. Mendialdua, B. Djafari-Rouhani, and L. Dobrzynski, Phys. Rev. B 47, 13 553 (1993)].
    • (1993) Phys. Rev. B , vol.47 , pp. 13553
    • Lockwood, D.1    Devine, R.2    Rodriguez, A.3    Mendialdua, J.4    Djafari-Rouhani, B.5    Dobrzynski, L.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.