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Volumn 17, Issue 4, 1999, Pages 2345-2350

Properties of Si1-xGex three-dimensional islands

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; CLASSICAL MODEL; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DISLOCATION-FREE; ISLAND SHAPE; LINEAR ELASTIC MODEL; MOLE FRACTION; NUCLEATION AND GROWTH; NUMBER DENSITY; SI(0 0 1); SI(001) SURFACES; STRAINED FILMS; STRANSKI-KRASTANOV GROWTH MODE; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENCE; THREE-DIMENSIONAL (3D) ISLANDS; THREE-DIMENSIONAL ISLANDS; WETTING LAYER;

EID: 0001652375     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581771     Document Type: Conference Paper
Times cited : (7)

References (22)
  • 14
    • 78649782409 scopus 로고    scopus 로고
    • note
    • We have used RHEED to observe a (2Xn) reconstruction while depositing all of the alloy compositions in this study. A (2Xn) reconstruction indicates nearly monolayer coverage of Ge on the surface due to segregation.
  • 22
    • 78649764127 scopus 로고    scopus 로고
    • note
    • The diffusion energy is an "effective" energy because it could be altered from the intrinsic value by additional kinetic barriers generated by the 3D islands and by error from neglecting the binding energy in the Arrhenius relation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.