Photoluminescence studies of broadband excitation mechanisms for Dy3+ emission in Dy:As12Ge33Se55 glass

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2436-2441

  Turnbull, D A ^a   Gu, S Q ^a   Bishop, S G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001622301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363079     Document Type: Article

References (26)

1. E. Desurvire, Erbium-Doped Fiber Amplifiers (Wiley-Interscience, New York, 1994).
2. K. Wei, D. P. Machewirth, J. Wenzel, E. Snitzer, and G. H. Sigel, Jr., J. Non-Cryst. Solids 182, 257 (1995).
3. K. Wei, D. P. Machewirth, J. Wenzel, E. Snitzer, and G. H. Sigel, Jr., Opt. Lett. 19, 904 (1994).
4. D. W. Hewak, R. S. Deol, J. Wang, G. Wylangowski, J. A. Medeiros Neto, B. Samson, R. I. Laming, W. S. Brocklesby, D. N. Payne, A. Jha, M. Poulain, M. Otero, S. Surinach, and M. D. Baro, Electron. Lett. 29, 237 (1993).
5. D. W. Hewak, J. A. Medeiros Neto, B. Samson, R. S. Brown, K. P. Jedrzejewski, J. Wang, E. Taylor, R. I. Laming, G. Wylangowski, and D. N. Payne, IEEE Photonics Technol. Lett. 6, 609 (1994).
6. S. Q. Gu, S. Ramachandran, E. E. Reuter, D. A. Turnbull, J. T. Verdeyen, and S. G. Bishop, J. Appl. Phys. 77, 3365 (1995).
7. S. Q. Gu, S. Ramachandran, E. E. Reuter, D. A. Turnbull, J. T. Verdeyen, and S. G. Bishop, Appl. Phys. Lett. 66, 670 (1995).
8. S. Q. Gu, D. A. Turnbull, and S. G Bishop, IEEE Photonics Technol. Lett. 8, 260 (1996).
9. J. Tauc, F. J. DiSalvo, G. E. Peterson, and D. L. Wood, in Amorphous Magnetism, edited by H. O. Hooper and A. M. de Graaf (Plenum, New York, 1973), p. 119.
10. A. R. Hilton, D. J. Hayes, and M. D. Rechtin, J. Non-Cryst. Solids 17, 319 (1975).
11. N. F. Mott, Philos. Mag. 22, 7 (1970).
12. W. E. Spear and P. G. Lecomber, Philos. Mag. 33, 935 (1976).
13. R. A. Street, T. M. Searle, and I. G. Austin, Philos. Mag. 32, 431 (1975).
14. R. A. Street, Adv. Phys. 25, 397 (1976).
15. D. S. Blossey and P. Zallen, Phys. Rev. B 9, 4306 (1974).
16. R. A. Street, I. G. Austin, T. M. Searle, and B. A. Smith, J. Phys. C 4, 4185 (1974).
17. N. F. Mott, E. A. Davis, and R. A. Street, Philos. Mag. 32, 961 (1975).
18. M. Kastner, J. Non-Cryst. Solids 31, 223 (1978).
19. For simplicity, we describe only the case of an electron bound at the impurity. Of course, the complementary process, involving the excitation of a hole from the impurity into the valence band, could also occur.
20. D. L. Dexter, J. Chem. Phys. 21, 836 (1953).
21. J. D. Dow and D. Redfield, Phys. Rev. Lett. 26, 762 (1971).
22. D. J. Dunstan, J. Phys. C 30, L419 (1982).
23. R. Reisfeld and C. K. Jorgenson, Handbook on the Physics and Chemistry of Rare Earths (North-Holland, Amsterdam, 1987), Chap. 58.
24. S. G. Bishop, in Deep Centers in Semiconductors, edited by S. T. Pantelides (Gordon and Breach, New York, 1985), p. 541.
25. S. G. Bishop, D. J. Robbins, and P. J. Dean, Solid State Commun. 33, 119 (1980).
26. D. J. Robbins, P. J. Dean, J. L. Glasper, and S. G. Bishop, Solid State Commun. 36, 61 (1980).