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Volumn 63, Issue 6, 1989, Pages 644-647

Electronic transitions at the CaF2/Si(111) interface probed by resonant three-wave mixing spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001609593     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.63.644     Document Type: Article
Times cited : (165)

References (25)
  • 25
    • 84927392803 scopus 로고
    • The effective Rydberg for the interface exciton is case 1 over 4 of the binding energy, viz., 38 meV. By comparison, the effective Rydberg for bulk Si is 14 meV
    • (1970) K. L. Shaklee and R. E. Nahory, Phys. Rev. Lett. , vol.24 , pp. 942


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.