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Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 4, 1996, Pages 1937-1947

Raman study of free-standing porous silicon

(4) Tanino, H a Kuprin, A a Deai, H a Koshida, N b

a ELECTROTECHNICAL LABORATORY (Japan)

b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001607107 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.53.1937 Document Type: Article

Times cited : (55)

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