512×512 element GeSi/Si heterojunction infrared focal plane array

Opto-Electronics Review

Volumn 7, Issue 4, 1999, Pages 305-311

  Wada, H ^a   Nagashima, M ^a   Hayashi, K ^a   Nakanishi, J ^b   Kimata, M ^b   Kumada, N ^b   Ito, S ^b  

^a JAPAN DEFENSE AGENCY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Focal plane arrays; GeSi Si heterojunctions; MBE growth

Indexed keywords

EID: 0001579441     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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